supersot sot23 npn silicon power (switching) transistors issue 3 - november 1995 features * 625mw power dissipation *i c cont 3a * 12a peak pulse current * excellent h fe characteristics up to 12a (pulsed) * extremely low saturation voltage e.g. 8mv typ. * extremely low equivalent on resistance; r ce(sat) device type complement partmarking r ce(sat) fmmt617 fmmt717 617 50m w at 3a fmmt618 fmmt718 618 50m w at 2a FMMT619 fmmt720 619 75m w at 2a fmmt624 fmmt723 624 - fmmt625 ? 625 - absolute maximum ratings. parameter symbol fmmt 617 fmmt 618 fmmt 619 fmmt 624 fmmt 625 unit collector-base voltage v cbo 15 20 50 125 150 v collector-emitter voltage v ceo 15 20 50 125 150 v emitter-base voltage v ebo 55555v peak pulse current** i cm 126633a continuous collector current i c 32.5211a base current i b 500 ma power dissipation at t amb =25c* p tot 625 mw operating and storage temperature range t j :t stg -55 to +150 c * maximum power dissipation is calculated assuming that the device is mounted on a ceramic substrate measuring 15x15x0.6mm **measured under pulsed conditions. pulse width=300 m s. duty cycle 2% spice parameter data is available upon request for these devices c b e fmmt617 fmmt618 FMMT619 fmmt624 fmmt625 3 - 149
electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol fmmt618 FMMT619 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo 20 100 50 190 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 20 27 50 65 v i c =10ma* emitter-base breakdown voltage v (br)ebo 5 8.3 5 8.3 v i e =100 m a collector cut-off current i cbo 100 100 na na v cb =16v v cb =40v emitter cut-off current i ebo 100 100 na v eb =4v collector emitter cut-off current i ces 100 100 na na v ces =16v v ces =40v collector-emitter saturation voltage v ce(sat) 8 70 130 15 150 200 10 125 150 20 200 220 mv mv mv mv i c =0.1a, i b =10ma* i c =1a, i b =10ma* i c =2a, i b =50ma* i c =2.5a, i b =50ma* base-emitter saturation voltage v be(sat) 0.89 1.0 0.87 1.0 v v i c =2a, i b =50ma* i c =2.5a, i b =50ma* base-emitter turn-on voltage v be(on) 0.79 1.0 0.80 1.0 v v i c =2a, v ce =2v* i c =2.5a, v ce =2v* static forward current transfer ratio h fe 200 300 200 100 400 450 360 180 200 300 200 100 400 450 400 225 40 i c =10ma, v ce =2v* i c =200ma, v ce =2v* i c =1a, v ce =2v* i c =2a, v ce =2v* i c =6a, v ce =2v* transition frequency f t 100 140 100 165 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 23 30 12 20 pf v cb =10v, f=1mhz turn-on time t (on) 170 170 ns v cc =10v, i c =1a i b1 =-i b2 =10ma turn-off time t (off) 400 750 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% fmmt618 FMMT619 fmmt618 3 - 152 3 - 153 -55c 100c 25 c 0.0 0.2 0.4 0.6 0.8 1.0 1.2 collector current i c /i b =50 collector current collector current collector current 25 c 100c -55c 0.0 0.4 0.1 0.2 0.3 25 c 100c -55c i c /i b =50 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ce =2v 0 450 225 25 c 100c -55c v ce =2v 0.2 0.0 1.0 0.8 0.6 0.4 d.c. 1s 100ms 10ms 1ms 100 m s 10 1.0 0.1 0.01 single pulse test t amb = 25 deg c v ce (volts) safe operating area typical characteristics 0.1 10a 1ma 10a 1ma 10a 10a 1ma 1 100m 10m 1m 1m 10m 100m 1 10 i c - collector current (a) v ce(sat) v i c i c /i b =10 i c /i b =50 i c /i b =100 +25 c v ce(sat) vs i c v be(sat) vs i c h fe vs i c v be(on) vs i c 1ma 10ma 100ma 1a 10ma 100ma 1a 10ma 100ma 1a 10ma 100ma 1a 110100
0.0 0.2 0.4 0.6 0.8 1.0 1.2 collector current i c /i b =40 collector current 10a collector current collector current 0.0 i c /i b =40 0.0 0.2 0.4 0.6 0.8 1.0 1.2 v ce =2v 0 450 225 v ce =2v 0.2 0.0 1.0 0.8 0.6 0.4 10 1.0 0.1 0.01 single pulse test t amb = 25 deg c v ce (volts) typical characteristics 0.2 0.4 0.6 -55c 100 c 25c 25 c 100 c -55c 25c 100 c -55c 25 c 100 c -55c d.c. 1s 100ms 10ms 1ms 100 m s 0.1 10a 1ma 10a 1ma 10a 1ma 10a 1ma safe operating area 1 100m 10m 1m 1m 10m 100m 1 10 i c - collector current (a) v ce(sat) v i c i c /i b =10 i c /i b =50 i c /i b =100 +25c v ce(sat) vs i c v be(sat) vs i c h fe vs i c v be(on) vs i c 10ma 100ma 1a 10ma 100ma 1a 10ma 100ma 1a 10ma 100ma 1a 110100 FMMT619 electrical characteristics (at t amb = 25c unless otherwise stated). parameter symbol fmmt624 fmmt625 unit conditions. min. typ. max. min. typ. max. collector-base breakdown voltage v (br)cbo 125 250 150 300 v i c =100 m a collector-emitter breakdown voltage v (br)ceo 125 160 150 175 v i c =10ma* emitter-base breakdown voltage v (br)ebo 58.3 58.3 v i e =100 m a collector cut-off current i cbo 100 100 na na v cb =100v v cb =130v emitter cut-off current i ebo 100 100 na v eb =4v collector emitter cut-off current i ces 100 100 na na v ces =100v v ces =130v collector-emitter saturation voltage v ce(sat) 26 70 160 165 50 150 220 250 26 110 180 50 200 300 mv mv mv mv mv i c =0.1a, i b =10ma* i c =0.1a, i b =1ma* i c =0.5a, i b =50ma* i c =0.5a, i b =10ma* i c =1a, i b =50ma* base-emitter saturation voltage v be(sat) 0.85 1.0 0.85 1.0 v i c =1a, i b =50ma* base-emitter turn-on voltage v be(on) 0.7 1.0 0.74 1.0 v i c =1a, v ce =10v* static forward current transfer ratio h fe 200 300 100 400 450 140 18 200 300 30 400 450 45 15 i c =10ma, v ce =10v* i c =0.2a, v ce =10v* i c =1a, v ce =10v* i c =3a, v ce =10v* transition frequency f t 100 155 100 135 mhz i c =50ma, v ce =10v f=100mhz output capacitance c obo 7 15 6 10 pf v cb =10v, f=1mhz turn-on time t (on) 60 160 ns v cc =50v, i c =0.5a i b1 =-i b2 =50ma turn-off time t (off) 1300 1500 ns *measured under pulsed conditions. pulse width=300 m s. duty cycle 2% fmmt624 fmmt625 3 - 154 3 - 155
derating curve * reference above figures, devices were mounted on a 15mmx15mm ceramic substrate maximum transient thermal resistance fmmt617 fmmt624 fmmt618 fmmt625 FMMT619 thermal characteristics and derating information fmmt717 fmmt722 fmmt718 fmmt723 fmmt720 supersot series 3 - 158
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